Low-resistance spin-dependent tunnel junctions with ZrAlOx barriers
نویسندگان
چکیده
منابع مشابه
Low-Resistance Spin-Dependent Tunnel Junctions With HfAlOx Barriers for High-Density Recording-Head Application
Spin-dependent tunnel junctions with the structure (Ta 70 Å/NiFe 70 Å/MnIr 80 Å/CoFe 35 Å/HfAlO /CoFe 35 Å/NiFe 40 Å/TiW(N) 150 Å) were fabricated on top of 600-Å-thick ion-beam-smoothed low-resistance Al electrodes. HfAlO barriers were formed by natural oxidation (5 min at 1 torr in pure O2) of 5-Å-thick (2-Å Hf + 3-Å Al) films or 6-Å-thick (2-Å Hf + 4-Å Al) films. Resistance area (R A) produc...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2001
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.1428111